SEMIX352GB128DS IGBT

Semikron International

SEMIX352GB128DS Description

SEMiX352GB128Ds Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V VGES tpsc Tj =.

SEMIX352GB128DS Features

* Homogeneous Si
* SPT = Soft-Punch-Through technology
* VCE(sat) with positive temperature coefficient
* High short circuit capability

SEMIX352GB128DS Applications

* AC inverter drives
* UPS
* Electronic welders up to 20 kHz Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 200 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE =

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Datasheet Details

Part number: SEMIX352GB128DS
Manufacturer: Semikron International
File Size: 376.29 KB
Datasheet: SEMIX352GB128DS_SemikronInternational.pdf
Description: IGBT

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IGBT Semikron International

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