BAR63-03- Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-03W- Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-04- Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-04W- Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-05- Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-05W- Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-06- Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-06W- Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
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BAR 63-02W
Silicon PIN Diode • PIN diode for high speed switching of RF signals • Low forward resistance, small capacitance small inductance • Very low capacitance • For frequencies up to 3 GHz
2
1
VES05991
Type BAR 63-02W
Marking Ordering Code G Q62702-A1211
Pin Configuration 1=C 2=A
Package SCD-80
Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 115 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient
1)
Symbol
Value 50 100 250 150 -55 ...+150 -55 ...+150
Unit V mA mW °C °C
VR IF Ptot Tj Top Tstg
RthJA RthJS
≤ 220 ≤ 140
K/W
Junction - soldering point
1) Package mounted on alumina 15mm x 16.7mm x 0.
BAR63-02W Datasheet
