CFY77-08
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) (Siemens Semiconductor Group)
CFY77-10
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) (Siemens Semiconductor Group)
CFY25
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
CFY25
HiRel X-Band GaAs MOSFET (Infineon)
CFY25-17
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
CFY25-20
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
CFY25-20
HiRel X-Band GaAs MOSFET (Infineon)
CFY25-20P
HiRel X-Band GaAs MOSFET (Infineon)
CFY25-23
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
CFY25-23
HiRel X-Band GaAs MOSFET (Infineon)