HYB3117800BSJ-50 Datasheet - Siemens Semiconductor Group

HYB3117800BSJ-50 2M x 8 - Bit Dynamic RAM 2k Refresh

3.3V DRAM (access time 50 ns) 3.3V DRAM (access time 60 ns) 3.3V DRAM (access time 70 ns) VCC VSS N.C. Semiconductor Group 2 HYB 3117800BSJ-50/-60/-70 2M x 8-DRAM P-SOJ-28-3 (400mil) VCC I/O1 I/O2 I/O3 I/O4 WE RAS N.C. A10 A0 A1 A2 A3 VCC O 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23.

2M x 8-Bit Dynamic RAM HYB3117800BSJ-50/-60/-70 Advanced Information 2 097 152 words by 8-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 90 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns Single + 3.3 V (± 0.3V) supply Low power dissipation max. 432 active mW (-50 version) max. .

HYB3117800BSJ-50 Features

* include single + 3.3 V (± 0.3V) power supply, direct interfacing with high-performance logic device families. Ordering Information Type HYB 3117800BSJ-50 HYB 3117800BSJ-60 HYB 3117800BSJ-70 Pin Names A0 to A10 A0 to A9 RAS OE I/O1-I/O8 CAS WE Row Address Inputs Column Address Inputs Row Address Stro

HYB3117800BSJ-50 Datasheet (260.67 KB)