HYB314175BJ-50 Datasheet - Siemens Semiconductor Group

HYB314175BJ-50 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh

3.3 V 50 ns 256 Kx16 EDO-DRAM 3.3 V 55 ns 256 Kx16 EDO-DRAM 3.3 V 60 ns 256 Kx16 EDO-DRAM 3.3 V 50 ns 256 Kx16 EDO- DRAM 3.3 V 55 ns 256 Kx16 EDO- DRAM 3.3 V 60 ns 256 Kx16 EDO-DRAM Pin Names A0-A8 RAS UCAS, LCAS WE OE I/O1 * I/O16 Address Inputs Row Address Strobe Column Address Strobe Rea.

3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh) HYB 314175BJ-50/-55/-60 HYB 314175BJL-50/-55/-60 Preliminary Information 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 55 ns (-55 version) 60 ns (-60 version) CAS access time: 13ns (-50 & -55 version) 15 ns (-60 version) Cycle time: 89 ns (-50 version) 94 ns (-55 version) .

HYB314175BJ-50 Features

* include Self Refresh (L-Version), single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families. Semiconductor Group 1 7.96 HYB 314175BJ/BJL-50/-55/-60 3.3V 256K x 16 EDO-DRAM Ordering Information Type HYB 314175BJ-50 HYB 314175BJ-55 HYB 314175BJ-60 HYB 3

HYB314175BJ-50 Datasheet (1.28 MB)

HYB314175BJ-50 Datasheet Preview — Preview of HYB314175BJ-50 PDF

Datasheet Details

Part number:

HYB314175BJ-50

Manufacturer:

Siemens Semiconductor Group

File Size:

1.28 MB

Description:

3.3v 256 k x 16-bit edo-dram 3.3v 256 k x 16-bit edo-dram low power version with self refresh.

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TAGS

HYB314175BJ-50 3.3V 256 16-Bit EDO-DRAM 3.3V 256 16-Bit EDO-DRAM Low power version with Self Refresh Siemens Semiconductor Group

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