HYB314175BJ-50, HYB-314 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh

Siemens Semiconductor Group

Description

3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh) HYB 314175BJ-50/-55/-60 HYB 314175BJL-50/-55/-60 Pre.
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HYB314175BJ-50 Datasheet Preview — This datasheet PDF includes multiple part numbers: HYB314175BJ-50, HYB-314. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HYB314175BJ-50, HYB-314
Manufacturer: Siemens Semiconductor Group
File Size: 1.28 MB
Datasheet: HYB-314-175.pdf
Description: 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
Note: This datasheet PDF includes multiple part numbers: HYB314175BJ-50, HYB-314.
Please refer to the document for exact specifications by model.

Features

* include Self Refresh (L-Version), single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families. Semiconductor Group 1 7.96 HYB 314175BJ/BJL-50/-55/-60 3.3V 256K x 16 EDO-DRAM Ordering Information Type HYB 314175BJ-50 HYB 314175BJ-55 HYB 314175BJ-60 HYB 3

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📌 All Tags

HYB-314 3.3V 256 16-Bit EDO-DRAM 3.3V 256 16-Bit EDO-DRAM Low power version with Self Refresh Siemens Semiconductor Group

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