HYB314400BJ-50 Datasheet - Siemens Semiconductor Group

HYB314400BJ-50 1M x 4-Bit Dynamic RAM

HYB 314400BJ-50 on request HYB 314400BJ-60 on request P-SOJ-26/20-2 300 mil 3.3 V DRAM (access time 50 ns) P-SOJ-26/20-2 300 mil 3.3 V DRAM (access time 60 ns) Semiconductor Group 2 1998-10-01 HYB 314400BJ-50/-60 3.3 V 1M × 4 DRAM P-SOJ-26/20-2 I/O1 I/O2 WE RAS A9 1 2 3 4 5 26 25 24 23 22 V.

1M × 4-Bit Dynamic RAM HYB 314400BJ-50/-60 Advanced Information 1 048 576 words by 4-bit organization 0 to 70 °C operating temperature Fast Page Mode Operation Performance: -50 -60 60 15 30 110 40 ns ns ns ns ns tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 95 35 Fast access and cycle time Single + 3.3 V (± 0.3 V) supply with a built-in VBB generator <.

HYB314400BJ-50 Datasheet (126.20 KB)