HYB3164165TL-50 Datasheet - Siemens Semiconductor Group

HYB3164165TL-50 4M x 16-Bit Dynamic RAM

EDO-DRAM (access time 50 ns) EDO-DRAM (access time 60 ns) EDO-DRAM (access time 50 ns) EDO-DRAM (access time 60 ns) EDO-DRAM (access time 50 ns) EDO-DRAM (access time 60 ns) EDO-DRAM (access time 50 ns) EDO-DRAM (access time 60 ns) Pin Names A0-A12 A0-A11 RAS OE I/O1-I/O16 UCAS, LCAS WRITE Vcc Vss.

4M x 16-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164165T(L) -50/-60 HYB 3165165T(L) -50/-60 Preliminary Information 4 194 304 words by 16-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 84 ns (-50 version) 104 ns (-60 version) CAS access time: 13 ns ( -50 version) .

HYB3164165TL-50 Datasheet (391.33 KB)