HYB3164800T-60 Datasheet - Siemens Semiconductor Group

HYB3164800T-60 8M x 8-Bit Dynamic RAM

500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) Semiconductor Group 122 HYB 3164.

8M x 8-Bit Dynamic RAM (4k & 8k Refresh) HYB 3164800J/T -50/-60 HYB 3165800J/T -50/-60 Preliminary Information 8 388 608 words by 8-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 90 ns (-50 version) 110 ns (-60 version) CAS access time: 13 ns ( -50 version) 15 ns ( -60 version) Fast p.

HYB3164800T-60 Features

* A tRAS 35 10

* 50

* 30

HYB3164800T-60 Datasheet (453.78 KB)