HYB3165165BTL-60 Datasheet - Siemens Semiconductor Group

HYB3165165BTL-60 4M x 16-Bit Dynamic RAM

Semiconductor Group 2 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM Pin Configuration P-TSOPII-50 (400 mil) O VCC I/O1 I/O2 I/O3 I/O4 VCC I/O5 I/O6 I/O7 I/O8 N.C. VCC WE RAS N.C. N.C. N.C. N.C. A0 A1 A2 A3 A4 A5 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 . 14 15 16 17 18 19 20 21 22 23 24 25 50 49 .

4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-version) Preliminary Information HYB 3164165BT(L) -40/-50/-60 HYB 3165165BT(L) -40/-50/-60 HYB 3166165BT(L) -40/-50/-60 4 194 304 words by 16-bit organization 0 to 70 °C operating temperature Hyper Page Mode - EDO - operation Performance: -40 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/write cycle time Hyper page mode (EDO) cycle time 40 10 20 69 16 -50 50 13 25 84.

HYB3165165BTL-60 Datasheet (305.00 KB)