HYB3165405BJ-50 Datasheet - Siemens Semiconductor Group

HYB3165405BJ-50 16M x 4-Bit Dynamic RAM

Semiconductor Group 2 HYB3164(5)405BJ/BT(L)-40/-50/-60 16M x 4-DRAM P-SOJ-32-1 (400 mil) P-TSOPII-32-1 (400 mil) VCC I/O1 I/O2 N.C. N.C. N.C. N.C. WE RAS . A0 A1 A2 A3 A4 A5 VCC O 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VSS I/O4 I/O3 N.C. N.C. .

16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164405BJ/BT(L) -40/-50/-60 HYB 3165405BJ/BT(L) -40/-50/-60 Preliminary Information 16 777 216 words by 4-bit organization 0 to 70 °C operating temperature Hyper Page Mode - EDO - operation Performance: -40 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/write cycle time Hyper page mode (EDO) cycle time 40 10 20 69 16 -50 50 13 25 84 20 -60 60 15 30 104 25 ns.

HYB3165405BJ-50 Datasheet (303.47 KB)