HYB3165405TL-50 Datasheet - Siemens Semiconductor Group

HYB3165405TL-50 16M x 4-Bit Dynamic RAM

500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 50.

16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164405J/T(L) -50/-60 HYB 3165405J/T(L) -50/-60 Preliminary Information 16 777 216 words by 4-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 84 ns (-50 version) 104 ns (-60 version) CAS access time: 13 ns ( -50 version) 15 ns .

HYB3165405TL-50 Datasheet (473.40 KB)