SFH425 Datasheet - Siemens Semiconductor Group

SFH425 GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, τ = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Symbol Symbol Wert Value * 55 + 100 100 5.

GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package 3.0 2.6 2.3 2.1 2.1 1.7 0.1 (typ) 0.9 0.7 SFH 420 SFH 425 fpl06724 SFH 420 TOPLED® 3.4 3.0 2.4 0.8 0.6 Cathode/Collector marking Approx. weight 0.03 g 1.1 0.5 0.18 0.6 0.12 0.4 Cathode/Collector GPL06724 (2.4) 2.8 2.4 4.2 3.8 0.7 3.7 3.3 Cathode/ Collector 2.54 spacing 1.1 0.9 Anode/ Emitter (2.85) GPL06880 Collector/Cathode marking (2.9) (R1) 3.8 3.4 SFH 425 SIDELED® fpl06867 4.2 3.8 Maβe in mm, we.

SFH425 Features

* q Very highly efficient GaAs-LED q Good Linearity (Ie = f [IF]) at high currents q DC (with modulation) or pulsed operations are possible q High reliability q High pulse handling capability q Suitable for surface mounting (SMT) q Available on tape and reel q SFH 420 same package as SFH 320/421 SFH 4

SFH425 Datasheet (48.71 KB)