SFH426 GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package

Siemens Semiconductor Group

Description

GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAlAs Infrared Emitter in SMT Package 3.0 2.6 2.3 2.1 2.1 1.7 0.1 (typ) 0.9 0.7 SFH 421 SFH 426 fpl06724 .
Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchl.

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Datasheet Specifications

Part number: SFH426
Manufacturer: Siemens Semiconductor Group
File Size: 53.62 KB
Datasheet: SFH426_SiemensSemiconductorGroup.pdf
Description: GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package

Features

* q Very highly efficient GaAIAs-LED q Good Linearity (Ie = f [IF]) at high currents q DC (with modulation) or pulsed operations are possible q High reliability q High pulse handling capability q Suitable for surface mounting (SMT) q Available on tape and reel q SFH 421 same package as SFH 320/420 SFH

Applications

* q Miniature photointerrupters q Industrial electronics q For drive and control circuits Typ Type Bestellnummer Ordering Code Gehäuse Package Kathodenkennzeichnung: abgesetzte Ecke cathode marking: bevelled edge TOPLED SIDELED SFH 421 SFH 426 Q62702-P1055 Q62703-P0331 Grenzwerte (TA = 25 °C) Ma

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📌 All Tags

SFH426 GaAlAs-IR-Lumineszenzdiode SMT-Gehause GaAlAs Infrared Emitter SMT Package Siemens Semiconductor Group

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