HYB514100BJ-50 Datasheet - Siemens

HYB514100BJ-50 4M x 1-Bit Dynamic RAM

DRAM (access time 50 ns) DRAM (access time 60 ns) P-SOJ-26/20-2 V SS DO CAS N.C. A9 DI WE RAS N.C. A10 1 2 3 4 5 26 25 24 23 22 A0 A1 A2 A3 V CC 9 10 11 12 13 18 17 16 15 14 A8 A7 A6 A5 A4 SPP02808 Pin Configuration Pin Names A0 * A10 RAS CAS WE DI DO Address Input Row Address Str.

4M × 1-Bit Dynamic RAM HYB 514100BJ-50/-60 Advanced Information 4 194 304 words by 1-bit organization 0 to 70 °C operating temperature Fast Page Mode Operation Performance: -50 -60 60 15 30 110 40 ns ns ns ns ns tRAC RAS access time tCAC CAS access time tAA tRC tPC Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 95 35 Single + 5 V (± 10 %) supply with a built-in VBB generator Low power dissipation .

HYB514100BJ-50_SiemensSemiconductorGroup.pdf