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HYB514171BJ-60 - 256k x 16-Bit Dynamic RAM

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Description

N.C.

Features

  • include single + 5 V (± 10 %) power supply, direct interfacing with high performance logic device families such as Schottky TTL. Semiconductor Group 1 1998-10-01 HYB 514171BJ-50/-60 256k × 16 DRAM Ordering Information Type HYB 514171BJ-50 HYB 514171BJ-60 Truth Table RAS H L L L L L L L L LCAS H H L H L L H L L UCAS H H H L L H L L L WE H H H H H L L L H OE H H L L L H H H H I/O1 - I/O8 High-Z High-Z Dout High-Z Dout Din Don't care Din High-Z I/O9 - I/O16 High-Z High-Z High-Z Dout Dout Don't.

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Datasheet Details

Part number HYB514171BJ-60
Manufacturer Siemens
File Size 181.39 KB
Description 256k x 16-Bit Dynamic RAM
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256k × 16-Bit Dynamic RAM HYB 514171BJ-50/-60 Advanced Information • • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) CAS access time: 15ns (-50, -60 version) Cycle time: 95 ns (-50 version) 110 ns (-60 version) Fast page mode cycle time 35 ns (-50 version) 40 ns (-60 version) Single + 5.0 V (± 10 %) supply with a built-in VBB generator Low Power dissipation max. 1045 mW active (-50 version) max. 935 mW active (-60 version) • Standby power dissipation 11 mW standby (TTL) 5.5 mW max.
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