3VD182600YL Datasheet - Silan Microelectronics

3VD182600YL HIGH VOLTAGE MOSFET CHIPS

Ø 3VD182600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Ø Ø Ø Ø Advanced termination scheme to provide enhanced voltage-blocking capability. Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable t.

3VD182600YL_SilanMicroelectronics.pdf

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Datasheet Details

Part number:

3VD182600YL

Manufacturer:

Silan Microelectronics

File Size:

45.88 KB

Description:

High voltage mosfet chips.

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3VD182600YL 3VD182600YL HIGH VOLTAGE MOSFET CHIPS Silan Microelectronics