3VD186600YL Datasheet - Silan Microelectronics

3VD186600YL HIGH VOLTAGE MOSFET CHIPS

¾ 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltageblocking capability. ¾ Avalanche Energy Specified ¾ Source-to-Drain Diode Recovery Time Comparable to a D.

3VD186600YL_SilanMicroelectronics.pdf

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Datasheet Details

Part number:

3VD186600YL

Manufacturer:

Silan Microelectronics

File Size:

114.84 KB

Description:

High voltage mosfet chips.

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3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS Silan Microelectronics