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3VD186700YL Datasheet - Silan Microelectronics

3VD186700YL HIGH VOLTAGE MOSFET CHIPS

¾ 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking capability. Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable t.

3VD186700YL_SilanMicroelectronics.pdf

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Datasheet Details

Part number:

3VD186700YL

Manufacturer:

Silan Microelectronics

File Size:

102.79 KB

Description:

High voltage mosfet chips.

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3VD186700YL 3VD186700YL HIGH VOLTAGE MOSFET CHIPS Silan Microelectronics