Datasheet Details
| Part number | 3VD499650YL |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 123.12 KB |
| Description | HIGH-VOLTAGE MOSFET |
| Datasheet |
 3VD499650YL_SilanMicroelectronics.pdf
|
| Part number | 3VD499650YL |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 123.12 KB |
| Description | HIGH-VOLTAGE MOSFET |
| Datasheet |
3VD499650YL_SilanMicroelectronics.pdf
|
¾ 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking capability; Avalanche Energy Specified; Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode; The chips may packaged in TO-220 type and the typical equivalent product is 12N65; The packaged product is widely used in AC-DC power suppliers, DC-DC converters and
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