3VD499650YL Datasheet - Silan Microelectronics

3VD499650YL HIGH-VOLTAGE MOSFET

¾ 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking capability; Avalanche Energy Specified; Source-to-Drain Diode Recovery Time Comparable .

3VD499650YL_SilanMicroelectronics.pdf

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Datasheet Details

Part number:

3VD499650YL

Manufacturer:

Silan Microelectronics

File Size:

123.12 KB

Description:

High-voltage mosfet.

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3VD499650YL 3VD499650YL HIGH-VOLTAGE MOSFET Silan Microelectronics