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SVD50N06MJ, SVD50N06D Datasheet - Silan Microelectronics

SVD50N06MJ MOSFET

SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switc.

SVD50N06MJ Features

* ∗ 50A,60V,RDS(on)（typ）=18mΩ@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD50N06T SVD50N06D SVD50N06DTR SVD50N06MJ Package TO-220-3L TO-252-2L TO-252-2L TO-251J-3L Marking SVD50N06T SVD50N06D SVD50N06D SVD50N06MJ M

SVD50N06D-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVD50N06MJ, SVD50N06D. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVD50N06MJ, SVD50N06D

Manufacturer:

Silan Microelectronics

File Size:

435.77 KB

Description:

Mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVD50N06MJ, SVD50N06D.
Please refer to the document for exact specifications by model.

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SVD50N06MJ SVD50N06D MOSFET Silan Microelectronics

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