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SVD50N06MJ

MOSFET

SVD50N06MJ Features

* ∗ 50A,60V,RDS(on)（typ）=18mΩ@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD50N06T SVD50N06D SVD50N06DTR SVD50N06MJ Package TO-220-3L TO-252-2L TO-252-2L TO-251J-3L Marking SVD50N06T SVD50N06D SVD50N06D SVD50N06MJ M

SVD50N06MJ General Description

SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switc.

SVD50N06MJ Datasheet (435.77 KB)

Preview of SVD50N06MJ PDF

Datasheet Details

Part number:

SVD50N06MJ

Manufacturer:

Silan Microelectronics

File Size:

435.77 KB

Description:

Mosfet.

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SVD50N06MJ MOSFET Silan Microelectronics

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