SVD830F Datasheet - Silan Microelectronics

500V N-CHANNEL MOSFET

SVD830F Features

* ∗ 4.5A,500V,RDS(on(typ)=1.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No. SVD830T SVD830F SVD830D SVD830DTR Package TO-220-3L TO-220F-3L TO-252-2L TO-252-2L Marking SVD830T SVD830F SVD830D SVD830D Material Pb free Pb free Pb

SVD830F General Description

SVD830T/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide supe.

SVD830F Datasheet (678.67 KB)

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Datasheet Details

Part number:

SVD830F

Manufacturer:

Silan Microelectronics

File Size:

678.67 KB

Description:

500v n-channel mosfet.

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SVD830F 500V N-CHANNEL MOSFET Silan Microelectronics

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SVD830F Features

SVD830F General Description

Datasheet Details

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Description:

SVD830F Distributor