SVD8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology.
The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide su
SVD8N60T Features
* ∗ 8A,600V,RDS(on) typ =0.96Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No. SVD8N60T SVD8N60F Package TO-220-3L TO-220F-3L Marking SVD8N60T SVD8N60F Shipping 50Unit/Tube 50Unit/Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwi
SVD8N60F_SilanMicroelectronics.pdf
Datasheet Details
SVD8N60T, SVD8N60F
Silan Microelectronics
526.75 KB
600v n-channel mosfet.
This datasheet PDF includes multiple part numbers: SVD8N60T, SVD8N60F.
Please refer to the document for exact specifications by model.
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