SVD8N80F - MOSFET
SVD8N80T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide super
SVD8N80F Features
* ∗ 8A,800V,RDS(on)（typ）=1.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No. SVD8N80T SVD8N80F Package TO-220-3L TO-220F-3L Marking SVD8N80T SVD8N80F Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROE
