SVF3878P7, SVF3878P7-SilanMicroelectronics Datasheet - Silan Microelectronics

SVF3878P7 900V N-CHANNEL MOSFET

SVF3878P7 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching perf.

SVF3878P7 Features

* 9A, 900V, RDS(on) (typ.)=1. 0@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 12 3 TO-247-3L ORDERING INFORMATION Part No. SVF3878P7 Package TO-247-3L Marking 3878 Hazardous Substance Control Pb free Packing Type Tube ABSOLUTE MAXIMUM

SVF3878P7-SilanMicroelectronics_removed.pdf

SVF3878P7 Datasheet Preview — This datasheet PDF includes multiple part numbers: SVF3878P7, SVF3878P7-SilanMicroelectronics. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVF3878P7, SVF3878P7-SilanMicroelectronics

Manufacturer:

Silan Microelectronics

File Size:

288.45 KB

Description:

900v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVF3878P7, SVF3878P7-SilanMicroelectronics.
Please refer to the document for exact specifications by model.

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TAGS

SVF3878P7 SVF3878P7-SilanMicroelectronics 900V N-CHANNEL MOSFET Silan Microelectronics

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