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SVF3878P7, SVF3878P7-SilanMicroelectronics Datasheet - Silan Microelectronics

SVF3878P7, SVF3878P7-SilanMicroelectronics, 900V N-CHANNEL MOSFET

Silan Microelectronics SVF3878P7_Datasheet 9A, 900V N-CHANNEL MOSFET .
SVF3878P7 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VD.

Features

* 9A, 900V, RDS(on) (typ. )=1. 0@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability 12 3 TO-247-3L ORDERING INFORMATION Part No. SVF3878P7 Package TO-247-3L Marking 3878 Hazardous Substance Control Pb free Packing Type Tube ABSOLUTE MAXIMUM

SVF3878P7-SilanMicroelectronics_removed.pdf

This datasheet PDF includes multiple part numbers: SVF3878P7, SVF3878P7-SilanMicroelectronics. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVF3878P7, SVF3878P7-SilanMicroelectronics

Manufacturer:

Silan Microelectronics

File Size:

288.45 KB

Description:

900V N-CHANNEL MOSFET

Note:

This datasheet PDF includes multiple part numbers: SVF3878P7, SVF3878P7-SilanMicroelectronics.
Please refer to the document for exact specifications by model.

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