SVF8N60T Datasheet (Silan Microelectronics)

SVF8N60T, 600V N-CHANNEL MOSFET

SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide

SVF8N60T Features

* ∗ 8A,600V,RDS(on)(typ.)=0.96Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF8N60T SVF8N60F Package TO-220-3L TO-220F-3L Marking SVF8N60T SVF8N60F Material Pb free Pb free packing Tube Tube HANGZHOU SILAN MICROELECTR