SGT70N65FDM1P7 650V FIELD STOP IGBT

Silan Semiconductors

Description

Silan Microelectronics SGT70N65FDM1P7_Datasheet 70A, 650V FIELD STOP IGBT .
SGT70N65FD1M1P7 adopts Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application.

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Datasheet Specifications

Part number: SGT70N65FDM1P7
Manufacturer: Silan Semiconductors
File Size: 267.30 KB
Datasheet: SGT70N65FDM1P7-SilanSemiconductors.pdf
Description: 650V FIELD STOP IGBT

Features

* 70A, 650V, VCE(sat)(typ. )=2.3V@IC=70A
* Low conduction loss
* Fast switching
* High input impedance C 2 1 G 3 E 12 3 TO-247-3L NOMENCLATURE SGT 70 N 65
* P
* IGBT series Current: 70 denotes 70A N : N Channel NE : N-channel planar gate ESD T : N-ch

SGT70N65FDM1P7 Distributors

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SGT70N65FDM1P7 650V FIELD STOP IGBT Silan Semiconductors

Silan Semiconductors SGT70N65FDM1P7-like datasheet