SGT70N65FDM1P7 Datasheet - Silan Semiconductors

SGT70N65FDM1P7 650V FIELD STOP IGBT

SGT70N65FDM1P7 Features

* 70A, 650V, VCE(sat)(typ.)=2.3V@IC=70A

* Low conduction loss

* Fast switching

* High input impedance C 2 1 G 3 E 12 3 TO-247-3L NOMENCLATURE SGT 70 N 65

* P

* IGBT series Current: 70 denotes 70A N : N Channel NE : N-channel planar gate ESD T : N-ch

Datasheet Details

SGT70N65FDM1P7

Silan Semiconductors

267.30 KB

650v field stop igbt.

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