SGTP50V65FDB1P7

650V FIELD STOP IGBT

Silan Semiconductors

* low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES

* 50A, 650V, VCE(sat)(typ.)=1.65V@IC=50A

* Low conduction loss

* Ultra-fast switching

* High input impedance

* TJmax.=175C C 2 1 G 3 E 123 TO-247-3L NOMENCLAT

SGTP50V65FDB1P7

Silan Semiconductors

475.21 KB

650v field stop igbt.

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SGTP50V65FDB1P7 650V FIELD STOP IGBT Silan Semiconductors

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