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SGTP50V65FDB1P7, SGTP50V65FDB1P7-SilanSemiconductors Datasheet - Silan Semiconductors

SGTP50V65FDB1P7, SGTP50V65FDB1P7-SilanSemiconductors, 650V FIELD STOP IGBT

Silan Microelectronics SGTP50V65FDB1P7_Datasheet 50A, 650V FIELD STOP IGBT .
The SGTP50V65FDB1P7 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss.
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SGTP50V65FDB1P7-SilanSemiconductors_removed.pdf

This datasheet PDF includes multiple part numbers: SGTP50V65FDB1P7, SGTP50V65FDB1P7-SilanSemiconductors. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SGTP50V65FDB1P7, SGTP50V65FDB1P7-SilanSemiconductors

Manufacturer:

Silan Semiconductors

File Size:

475.21 KB

Description:

650V FIELD STOP IGBT

Note:

This datasheet PDF includes multiple part numbers: SGTP50V65FDB1P7, SGTP50V65FDB1P7-SilanSemiconductors.
Please refer to the document for exact specifications by model.

Features

* low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES
* 50A, 650V, VCE(sat)(typ. )=1.65V@IC=50A
* Low conduction loss
* Ultra-fast switching
* High input impedance
* TJmax. =175C C 2 1 G 3 E 123 TO-247-3L NOMENCLAT

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