SSM2602GY N-channel Enhancement-mode Power MOSFET

Silicon Standard

Description

SSM2602GY N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Capable of 2.5V gate drive Lower on-resistance Surface mount package RoHS Complian.
S D D SOT-26 G D D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficien.

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Datasheet Specifications

Part number: SSM2602GY
Manufacturer: Silicon Standard
File Size: 176.64 KB
Datasheet: SSM2602GY-SiliconStandard.pdf
Description: N-channel Enhancement-mode Power MOSFET

Applications

* BVDSS RDS(ON) ID G 20V 34mΩ 6.3A D S Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current1,2

SSM2602GY Distributors

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SSM2602GY N-channel Enhancement-mode Power MOSFET Silicon Standard

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