SSM2603GY P-channel Enhancement-mode Power MOSFET

Silicon Standard

Description

SSM2603GY P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Simple Drive Requirement Small Package Outline Surface Mount Device S D D SOT-26 .
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectivenes.

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Datasheet Specifications

Part number: SSM2603GY
Manufacturer: Silicon Standard
File Size: 187.71 KB
Datasheet: SSM2603GY-SiliconStandard.pdf
Description: P-channel Enhancement-mode Power MOSFET

Applications

* BVDSS RDS(ON) ID G -20V 65mΩ -5.0A D S Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipati

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SSM2603GY P-channel Enhancement-mode Power MOSFET Silicon Standard

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