SSM2602Y N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Silicon Standard

Description

SSM2602Y N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate drive Low on-resistance Surface mount package .
S D D G SOT-26 D D These Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance.

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Datasheet Specifications

Part number: SSM2602Y
Manufacturer: Silicon Standard
File Size: 162.90 KB
Datasheet: SSM2602Y-SiliconStandard.pdf
Description: N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Applications

* BV DSS R DS(ON) ID 20V 34mΩ 5.3A D G S Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current1,2 PD @ TA=25°C Total Power Diss

SSM2602Y Distributors

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SSM2602Y N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Silicon Standard

Silicon Standard SSM2602Y-like datasheet