SSM9918H Datasheet | Silicon Standard

Description Power MOSFETs from Silicon Standard provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Rating 20 ± 12 45 20 140 48 0.38 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.6 110 Unit ℃/W ℃/W Rev.2.01 6/26/2003 .Silicon Standard. 1 of 6 Data Sheet 4 U . .. SSM9918H,J Electrical Characteristics @ Tj=25o C (unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250u A Min. 20 0.5 - Typ. 0.1 26 19 1.5 10.5 7.5 83 18 23 500 310 125 Max. Units 14 28 1.2 1 25 ±100 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=18A VGS=2.5V, ID=9A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125o C) o VDS=VGS, ID=250u A VDS=10V, ID=18A VDS=20V, VGS=0V VDS=20V ,VGS=0V VGS= ± 12V ID=18A VDS=20V VGS=5V VDS=10V ID=18A RG=3.3Ω,VGS=5V RD=0.56Ω VGS=0V VDS=20V f=1.0MHz Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer...