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SSM9915K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple drive requirement Lower gate charge Fast switching characteristic
Description
D
S D
SOT-223 G
Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
BVDSS RDS(ON) ID
20V 50mΩ 6.2A
D
G S
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a
Parameter Thermal Resistance Junction-ambient3
Rating 20 ±12 6.2 5 30 3.2
0.
SSM9915K Datasheet
