SSM9915J Datasheet | Silicon Standard

Description Power MOSFETs from Silicon Standard provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. SSM9915H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET BV DSS R DS(ON) ID 20V 50mΩ 20A GD S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage . Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient GD S Rating 20 ± 10 20 16 41 26 0.2 -55 to 150 -55 to 150 Max. Max. Value 4.8...