SSM9918H Description
Power MOSFETs from Silicon Standard provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Value 2.6 110 Unit ℃/W ℃/W Rev.2.01 6/26/2003 .SiliconStandard. SSM9918H,J @ Tj=25oC (unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.