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SSM9918H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance Capable of 2.5V gate drive Low drive current Surface mount package
D
BV DSS R DS(ON) ID
20V 14mΩ 45A
G S
Description
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S
TO-252(H)
G D S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current
1
Rating 20 ± 12 45 20 140 48 0.