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SSM9915H - N-Channel Enhancement-Mode Power MOSFET

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Description

Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Datasheet Details

Part number SSM9915H
Manufacturer Silicon Standard
File Size 589.25 KB
Description N-Channel Enhancement-Mode Power MOSFET
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www.DataSheet4U.com SSM9915H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Capable of 2.5V gate drive Low drive current Simple drive requirement G S D BV DSS R DS(ON) ID 20V 50mΩ 20A Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 20 ± 10 20 16 41 26 0.2 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ DataShee DataSheet4U.
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