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SSM9916J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the SSM9916J, a member of the SSM9916H N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Datasheet Details

Part number SSM9916J
Manufacturer Silicon Standard
File Size 291.70 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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SSM9916H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Capable of 2.5V gate drive Low drive current Simple drive requirement Description D G S Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TC=25°C ID @ TC=125°C IDM PD @ TC=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.
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