SSM9916H Overview
Description
D G S Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Symbol Parameter VDS VGS ID @ TC=25°C ID @ TC=125°C IDM PD @ TC=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Rthj-a BV DSS RDS(ON) ID 18V 25mΩ 35A GD S TO-252(H) GD S TO-251(J) Rating 18 ± 12 35 16 90 50 0.4 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max.
