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SSM9916H - N-Channel Enhancement-Mode Power MOSFET

General Description

Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Datasheet Details

Part number SSM9916H
Manufacturer Silicon Standard
File Size 291.70 KB
Description N-Channel Enhancement-Mode Power MOSFET
Datasheet download datasheet SSM9916H Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSM9916H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Capable of 2.5V gate drive Low drive current Simple drive requirement Description D G S Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TC=25°C ID @ TC=125°C IDM PD @ TC=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.