SSM9916H
SSM9916H is N-Channel Enhancement-Mode Power MOSFET manufactured by Silicon Standard.
Description
Power MOSFETs from Silicon Standard provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID @ TC=25°C ID @ TC=125°C IDM PD @ TC=25°C
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
BV DSS RDS(ON) ID
18V 25mΩ
35A
GD S
TO-252(H)
GD S
TO-251(J)
Rating 18 ± 12 35 16 90 50 0.4
-55 to 150 -55 to 150
Units V V A A A W
W/°C °C °C
Max. Max.
Value 2.5 110
Unit °C/W °C/W
Rev.2.02 1/29/2004
.Silicon Standard.
1 of 6
SSM9916H,J
Electrical Characteristics @ Tj=25o C (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max....
