Siliconix manufacturer logo Part number: EPAD100 Manufacturer: Siliconix File Size: 39.74kb Download: 📄 Datasheet Description: Pico-amp diodes.
EPAD200 - pico-amp diodes (Siliconix) oo 1ft low-leakage Q c:( A. pico-amp iodes III oo designed for . . . • C '4 Q High Impedance Diode c:( Switching A. III High Dynamic Ran.
EPAD50 - pico-amp diodes (Siliconix) oo 1ft low-leakage Q c:( A. pico-amp iodes III oo designed for . . . • C '4 Q High Impedance Diode c:( Switching A. III High Dynamic Ran.
EPAD500 - pico-amp diodes (Siliconix) oo 1ft low-leakage Q c:( A. pico-amp iodes III oo designed for . . . • C '4 Q High Impedance Diode c:( Switching A. III High Dynamic Ran.
EPA018BV - High Efficiency Heterojunction Power FET (ETC) Excelics DATA SHEET EPA018BV High Efficiency Heterojunction Power FET • • • • • • • • VERY HIGH fmax: 120GHz +20.0dBm TYPICAL OUTPUT POWER 13.0dB TY.
EPA060B-70 - High Efficiency Heterojunction Power FET (ETC) Excelics DATA SHEET Features • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +26dBm TYPICAL OUTPUT POWER • 9.0dB TYPICAL POWER GAIN AT 12 GHZ • 0.4 dB.
EPA073 - 14 Pin Dip And SMD 5 Taplow-profile TTL Compatible Active Delay Lines (PCA Electronics) w w w .D t a S a e h t e . U 4 m o c w w w .D a S a t e e h U 4 t m o .c .
EPA073HL - 14 Pin Dip And SMD 5 Taplow-profile TTL Compatible Active Delay Lines (PCA Electronics) 14 Pin DIP and SMD 5 Tap Low-Profile TTL Compatible Active Delay Lines Compatible with standard auto-insertable equipment and can be used in either in.
EPA1140-xx - SMD 8 Pin 5 Tap TTL Compatible Active Delay Lines (PCA ELECTRONICS) .. SMD 8 Pin 5 Tap TTL Compatible Active Delay Lines ELECTRONICS INC. EPA1140-XX & EPA1140-XX-RC Add “-RC” after part number for R.
EPA120 - 4 Line Common Mode Filter (PCA ELECTRONICS) .. 4 Line Common Mode Filter ELECTRONICS INC. EPA120 & EPA120G • Impedance limits per chart measured using HP4193A Vector Impedance.
EPA120E - High Efficiency Heterojunction Power FET (ETC) Excelics DATA SHEET • • • • • • +29.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSI.
