SSPL6005 Datasheet (Silikron Semiconductor) - N-Channel enhancement mode power field effect transistors

SSPL6005, N-Channel enhancement mode power field effect transistors

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche

SSPL6005 Features

* TO220

* Advanced Process Technology

* Special designed for PWM, load switching and general purpose applications

* Ultra low on-resistance with low gate charge

* Fast switching and reverse body recovery

* 175℃ operating temperature SSPL6005 Marking and pin Assignment Schemat