SSPL6005 N-Channel enhancement mode power field effect transistors

Silikron Semiconductor

Description

Main Product Characteristics: VDSS 60V RDS(on) 4.9mohm(typ.) ID 160A ① .
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

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Datasheet Specifications

Part number: SSPL6005
Manufacturer: SilikrON Semiconductor ↗
File Size: 621.54 KB
Datasheet: SSPL6005-SilikronSemiconductor.pdf
Description: N-Channel enhancement mode power field effect transistors

Features

* TO220
* Advanced Process Technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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SSPL6005 N-Channel enhancement mode power field effect transistors Silikron Semiconductor

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