SSF12N60F Datasheet (Silikron)

SSF12N60F, MOSFET

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche

SSF12N60F Features

* Advanced Process Technology

* Special designed for PWM, load switching and general purpose applications

* Ultra low on-resistance with low gate charge

* Fast switching and reverse body recovery

* 150℃ operating temperature TO220F SSF12N60F Marking and pin Assignment Schema