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SE3080K, SE3080A-Sino N-Channel MOSFET

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Description

SE3080A/K N-Channel Enhancement-Mode MOSFET Revision: A General .
Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage.

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This datasheet PDF includes multiple part numbers: SE3080K, SE3080A-Sino. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
SE3080K, SE3080A-Sino
Manufacturer
Sino-IC
File Size
444.16 KB
Datasheet
SE3080A-Sino-IC.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: SE3080K, SE3080A-Sino.
Please refer to the document for exact specifications by model.

Features

* For a single MOSFET
* VDS = 30V
* RDS(ON) = 4.5mΩ @ VGS=10V(SE3080A)
* RDS(ON) = 4.5mΩ @ VGS=10V(SE3080K) Pin configurations See Diagram below TO-252 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipati

Applications

* Simple Drive Requirement
* Small Package Outline

SE3080K Distributors

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