Description
Advanced trench technology to provide
excellent RDS(ON), low gate charge and low operation voltage.This device is suitable for using as a load switch or in PWM applications.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Features
- For a single MOSFET.
- VDS = 30V.
- RDS(ON) = 4.5mΩ @ VGS=10V(SE3080A).
- RDS(ON) = 4.5mΩ @ VGS=10V(SE3080K)
Pin configurations
See Diagram below
TO-252
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed
Total Power Dissipation @TA=25℃
Derating factor
Single pulse avalanche energy
Operating Junction Temperature Range
Thermal Resistance
Symbol Parameter RθJC Thermal Resistance Junction to Case
Symbol VDS VGS
ID
PD
EAS.
SE3080A-Sino-IC.pdf