Description
Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Features
- For a single MOSFET.
- VDS = 30V.
- RDS(ON) = 5.5mΩ @ VGS=10.
- RDS(ON) = 9.5mΩ @ VGS=4.5
Pin configurations
See Diagram below
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed
Total Power Dissipation @TA=25℃
Operating Junction Temperature Range
Symbol VDS VGS
ID
PD TJ
Rating 30 ±20 35 120 35
-55 to 150
Units V V
A
W ℃
ShangHai Sino-IC Microelectronic Co. , Ltd. 1.
SE3035
Electrical Characteristics (TJ=25℃ unless o.
SE3035-Sino-IC.pdf