SE3080G, SE3080G-Sino N-Channel MOSFET

Description

SE3080G N-Channel Enhancement-Mode MOSFET Revision: A General .
This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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SE3080G Datasheet Preview — This datasheet PDF includes multiple part numbers: SE3080G, SE3080G-Sino. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: SE3080G, SE3080G-Sino
Manufacturer: Sino-IC
File Size: 339.73 KB
Datasheet: SE3080G-Sino-IC.pdf
Description: N-Channel MOSFET
Note: This datasheet PDF includes multiple part numbers: SE3080G, SE3080G-Sino.
Please refer to the document for exact specifications by model.

Features

* For a single MOSFET
* VDS = 30V
* RDS(ON) = 4.5mΩ @ VGS=10V Pin configurations See Diagram below DD 56 DD 78 1 2 34 S S S G DFN5
* 6 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Singl

SE3080G Distributors

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SE3080G-Sino N-Channel MOSFET Sino-IC

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