SE3080G Features
* For a single MOSFET
* VDS = 30V
* RDS(ON) = 4.5mΩ @ VGS=10V Pin configurations See Diagram below DD 56 DD 78 1 2 34 S S S G DFN5
* 6 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Singl
Datasheet Details
SE3080G, SE3080G-Sino
Sino-IC
339.73 KB
N-channel mosfet.
This datasheet PDF includes multiple part numbers: SE3080G, SE3080G-Sino.
Please refer to the document for exact specifications by model.
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SE3080G Distributor
