SE3080G, SE3080G-Sino - N-Channel MOSFET

Datasheet Details

Part number	SE3080G, SE3080G-Sino
Manufacturer	Sino-IC
File Size	339.73 KB
Description	N-Channel MOSFET
Datasheet	SE3080G-Sino-IC.pdf
Note	This datasheet PDF includes multiple part numbers: SE3080G, SE3080G-Sino. Please refer to the document for exact specifications by model.

This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

For a single MOSFET.
VDS = 30V.
RDS(ON) = 4.5mΩ @ VGS=10V Pin configurations See Diagram below DD 56 DD 78 1 2 34 S S S G DFN5.
6 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junction Temperature Range Symbol VDS VGS ID PD EAS TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 30 ±20 80 170 83 306 -.

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Published: Feb 22, 2019 |