SE3082G Datasheet, Mosfet, Sino-IC

SE3082G Features

• Mosfet For a single MOSFET
• VDS = 30V
• RDS(ON) = 5.0mΩ @ VGS=10V Pin configurations See Diagram below D1 D1 D2 S1D2 87 65 D1 D1 D2 D2 1 2 34 G1 S2 S2 G2 Absolute Maximu

PDF File Details

Part number:

SE3082G

Manufacturer:

Sino-IC

File Size:

590.23kb

Download:

📄 Datasheet

Description:

N-channel mosfet. Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM

TAGS

SE3082G

Sino-IC

📁 Related Datasheet

SE308 - Light Emitting Diode (NEC)
NEe NEC Electronics Inc. SE308 GaAslNFRARED EMITTING DIODE NEPOC SERIES Description The SE308 is a GaAs (Gallium Arsenide) infrared LED in a plastic.

SE3080A - N-Channel MOSFET (Sino-IC)
SE3080A/K N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge.

SE3080G - N-Channel MOSFET (Sino-IC)
SE3080G N-Channel Enhancement-Mode MOSFET Revision: A General Description This type used advanced trench technology and design to provide excellent .

SE3080K - N-Channel MOSFET (Sino-IC)
SE3080A/K N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge.

SE301A - Light Emitting Diode (NEC)
t-iEC NEe Electronics Inc. SE301A GaAs INFRARED EMITTING DIODE INDUSTRIAL USE NEPCO SERIES Description The SE301A is a GaAs (Gallium Arsenide) infra.

SE302A - Light Emitting Diode (NEC)
NEe NEe Electronics Inc. SE302A GaAs INFRARED EMITTING DIODE INDUSTRIAL USE NEPCO SERIES Description The SE302A is a GaAs (Gallium Arsenide) infrare.

SE3035 - N-Channel MOSFET (Sino-IC)
Apr 2015 SE3035 N-Channel Enhancement-Mode MOSFET Revision: A General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Chara.

SE303A - Light Emitting Diode (NEC)
t\fEC NEe Electronics Inc. SE303A \1 GaAslNFRARED I EMITTING DIODE NEPOC SERIES Description The SE303A is a GaAs (gallium arsenide) infrared em.

SE3043NT5 - N-Channel MOSFET (WILLAS)
ϮϴϱŵEоŚĂŶŶĞůǁŝƚŚ ^WƌŽƚĞĐƚŝŽŶͲϮϬs ^ ϯϬϰϯEdϱ Features • Enables High Density PCB Manufacturing • 44% Smaller Footprint than SC−89 and 38% Thi.

SE306 - Light Emitting Diode (NEC)
tttrEC NEe Electronics Inc. , SE306 GaAslNFRARED EMITTING DIODE NEPOC SERIES Description The SE306 is a GaAs (Gallium Arsenide) infrared LED in a pl.