Description
Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Features
- For a single MOSFET.
- VDS = 30V.
- RDS(ON) = 5.0mΩ @ VGS=10V
Pin configurations
See Diagram below
D1 D1 D2 S1D2 87 65
D1 D1
D2 D2
1 2 34 G1 S2 S2 G2
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed
Total Power Dissipation
@TA=25℃
Operating Junction Temperature Range
Thermal Resistance
Symbol RθJC RθJA
Parameter Junction to Case Junction to Ambient
G1 S1
G2 S2
Symbol VDS VGS
ID
PD TJ
Rating 30 ±20 80
170 3.1 -5.
SE3082G-Sino-IC.pdf