SE3082G, SE3082G-Sino N-Channel MOSFET

Description

SE3082G N-Channel Enhancement-Mode MOSFET Revision: A General .
Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM. Simple Drive.

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SE3082G Datasheet Preview — This datasheet PDF includes multiple part numbers: SE3082G, SE3082G-Sino. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: SE3082G, SE3082G-Sino
Manufacturer: Sino-IC
File Size: 590.23 KB
Datasheet: SE3082G-Sino-IC.pdf
Description: N-Channel MOSFET
Note: This datasheet PDF includes multiple part numbers: SE3082G, SE3082G-Sino.
Please refer to the document for exact specifications by model.

Features

* For a single MOSFET
* VDS = 30V
* RDS(ON) = 5.0mΩ @ VGS=10V Pin configurations See Diagram below D1 D1 D2 S1D2 87 65 D1 D1 D2 D2 1 2 34 G1 S2 S2 G2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation

SE3082G Distributors

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SE3082G-Sino N-Channel MOSFET Sino-IC

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