SD11705 - 1200V SiC N-Channel Power MOSFET

Product Overview

Solitron Devices

Datasheet Details

Part number	SD11705
Manufacturer	Solitron Devices
File Size	895.67 KB
Description	1200V SiC N-Channel Power MOSFET
Datasheet	SD11705 Datasheet
Additional preview pages of the SD11705 datasheet.

Product details

Description

1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VDS, max Drain-Source Voltage VGS, max VGS, op Gate-Source Voltage (Max.) Gate-Source Voltage lD Continuous Drain Current lD, pulse Pulsed Drain Current PD Maximum Power Dissipation TJ, TSTG Junction Temperature, Operating and Storage TEST CONDITIONS VGS = 0V, ID = 19µA Absolute maximum values Recommended operational values VGS = 15V Pulse Width tp Limited by Tjmax VALUE 1200 -8/+19 -4/+15 5

Features

LOW RDS(ON) AND QG.

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Published: Jun 15, 2024 |