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SD11705 1200V SiC N-Channel Power MOSFET

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Description

KEY .
1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VDS, max Drain-Source Voltage VGS, max VGS, op Gate-.

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Datasheet Specifications

Part number
SD11705
Manufacturer
Solitron Devices
File Size
895.67 KB
Datasheet
SD11705-SolitronDevices.pdf
Description
1200V SiC N-Channel Power MOSFET

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