SD11740
Solitron Devices
73.63kb
1200v sic n-channel power mosfet. 1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VDS, max Drain-Source Voltage VGS, m
TAGS
📁 Related Datasheet
SD11704 - 900V SiC N-Channel Power MOSFET
(Solitron Devices)
KEY FEATURES
LOW RDS(ON) AND QG AVALANCHE RATED TO-258 5L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE
APPLICATIONS.
SD11705 - 1200V SiC N-Channel Power MOSFET
(Solitron Devices)
KEY FEATURES
LOW RDS(ON) AND QG AVALANCHE RATED TO-258 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE
APPLICATIONS.
SD11707 - 1200V SiC N-Channel Power MOSFET
(Solitron Devices)
KEY FEATURES
LOW RDS(ON) AND QG AVALANCHE RATED TO-258 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE
APPLICATIONS.
SD11710 - 700V SiC N-Channel Power MOSFET
(Solitron Devices)
KEY FEATURES
ID = 50A RDS(ON) = 15mΩ ISOLATED BACKSIDE TO-258 HERMETICALLY SEALED PACKAGE MIL-PRF-19500 SCREENING AVAILABLE LOW CAPACITANCES AND LOW G.
SD1100 - N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS
(ETC)
.
SD1100C - STANDARD RECOVERY DIODES Hockey Puk Version
(International Rectifier)
Previous Datasheet
Index
Next Data Sheet Bulletin I2073/B
SD1100C..L SERIES
STANDARD RECOVERY DIODES Hockey Puk Version
Features
Wide current rang.
SD1100P - (SD120P - SD1100P) Schottky Barrier Rectifiers
(TSC)
..
SD120P THRU SD1100P
1.0 Amp Schottky Barrier Rectifiers
Voltage Range 20 to 100 Volts Current 1.0 Amperes
Features
Low forward v.
SD1107 - angle sensor
(ETC)
SD1107
1
SD1107 AMR , 0~180° , 2 AMR , 。
SD1107 2 , AMR , AMR 。
SD1107 , 200Gus ,,,, 。
2
1 2 3 4 5 6 7 8
v1.2 2023.5.16
SD1107
1
8
2
7
3
.
SD1115 - (SD1xxx) Transistors
(SGS-Thomson)
w
w
w
.d
e e h s a t a
. u t4
m o c
..
.
SD1127 - (SD1xxx) Transistors
(SGS-Thomson)
w
w
w
.d
e e h s a t a
. u t4
m o c
..
.