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SD11740 - 1200V SiC N-Channel Power MOSFET

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Part number SD11740
Manufacturer Solitron Devices
File Size 73.63 KB
Description 1200V SiC N-Channel Power MOSFET
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Description

1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VDS, max Drain-Source Voltage VGS, max Gate-Source Voltage (dynamic) lD Continuous Drain Current lD, pulse Pulsed Drain Current PD Maximum Power Dissipation TJ, TSTG Junction Temperature, Operating and Storage TEST CONDITIONS VGS = 0V, ID = 100µA Absolute maximum values VGS = 15V Pulse Width tp Limited by Tjmax VALUE 1200 -20/+20 100 tbd tbd -55 to +175 UNIT V V A A W °C CALL: +1 561-848-43

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