SD11740 Datasheet - Solitron Devices

SD11740 1200V SiC N-Channel Power MOSFET

1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VDS, max Drain-Source Voltage VGS, max Gate-Source Voltage (dynamic) lD Continuous Drain Current lD, pulse Pulsed Drain Current PD Maximum Power Dissipation TJ, TSTG Junction Temperature, Operating.

SD11740 Features

* ID = 100A RDS(ON) = 8.6mΩ LOW GATE CHARGE KELVIN SOURCE SOT 227B BENEFITS PARALLEL DEVICES WITHOUT THERMAL RUNAWAY HIGHER SYSTEM EFFICIENCY EXCELLENT REVERSE RECOVERY APPLICATIONS HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES POWER SUPPLIES BATTERY CHARGERS SOLAR INVERTERS INDUCTION HEATING SD11740 120

SD11740 Datasheet (73.63 KB)