SD11710 Datasheet - Solitron Devices

SD11710 700V SiC N-Channel Power MOSFET

700V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VALUE VDS Drain-Source Voltage VGS Gate-Source Voltage (dynamic) lD Continuous Drain Current lD, pulse Pulsed Drain Current * PD Maximum Power Dissipation Linear Derating Factor TC = 25°C T.

SD11710 Features

* ID = 50A RDS(ON) = 15mΩ ISOLATED BACKSIDE TO-258 HERMETICALLY SEALED PACKAGE MIL-PRF-19500 SCREENING AVAILABLE LOW CAPACITANCES AND LOW GATE CHARGE FAST SWITCHING SPEED DUE TO LOW INTERNAL GATE RESISTANCE (ESR) STABLE OPERATION AT HIGH JUNCTION TEMPERATURE, TJ(MAX) = 175 °C FAST AND RELIABLE BODY DI

SD11710-SolitronDevices.pdf