Datasheet Details
| Part number | ST2304SRG |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 749.44 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
 ST2304SRG-StansonTechnology.pdf
|
| Part number | ST2304SRG |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 749.44 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
ST2304SRG-StansonTechnology.pdf
|
ST2304SRG N Channel Enhancement Mode MOSFET 3.2A ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.The product is in
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