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ST2300SRG
N Channel Enhancement Mode MOSFET
6.0A
DESCRIPTION
The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION SOT-23
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
FEATURE
20V/6.0A, RDS(ON) = 35mΩ (Typ.) @VGS = 10V
20V/5.0A, RDS(ON) = 48mΩ @VGS = 4.5V
20V/4.5A, RDS(ON) = 90mΩ @VGS = 2.
ST2300SRG Datasheet
