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ST2301A - P-Channel Enhancement Mode MOSFET

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Description

ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as

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Part number ST2301A
Manufacturer Stanson Technology
File Size 186.54 KB
Description P-Channel Enhancement Mode MOSFET
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ST2301A P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D G S 1 2 FEATURE -20V/-3.2A, RDS(ON) =85mΩ (Typ.) @VGS = -4.5V -20V/-2.0A, RDS(ON) = 100mΩ @VGS = -2.
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